Atom Probe Tomography Studies of GaN-Based Semiconductor Materials
نویسندگان
چکیده
منابع مشابه
Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials.
Various practical issues affecting atom probe tomography (APT) analysis of III-nitride semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN heterostructure. Specimen preparation was undertaken using a focused ion beam microscope with a mono-isotopic Ga source. This enabled the unambiguous observation of implantation damage induced by sample preparation. In the ...
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The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...
متن کاملAtom probe tomography of a-axis GaN nanowires: analysis of nonstoichiometric evaporation behavior.
GaN nanowires oriented along the nonpolar a-axis were analyzed using pulsed laser atom probe tomography (APT). Stoichiometric mass spectra were achieved by optimizing the temperature, applied dc voltage, and laser pulse energy. Local variations in the measured stoichiometry were observed and correlated with facet polarity using scanning electron microscopy. Fewer N atoms were detected from nonp...
متن کاملAtom Probe Tomography of <italic>a</italic>-Axis GaN Nanowires: Analysis of Nonstoichiometric Evaporation Behavior
James R. Riley, Rodrigo A. Bernal, Qiming Li, Horacio D. Espinosa, George T. Wang, and Lincoln J. Lauhon* Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States, Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States, and Sandia National Laboratories, Albuquerque, New Mexico 87185, United ...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2009
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927609097979